Erratum: “Low-temperature, flux-grown, Na-doped LaMnO3: Magnetic properties” [Appl. Phys. Lett. 70, 1622 (1997)]

نویسندگان
چکیده

برای دانلود رایگان متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Erratum to "Lacunary statistical convergence of multiple sequences" [Appl. Math. Lett. 19(2006) 527-534]

(1) On page 529: The statement “we will denote the set of all double lacunary sequences by Nθr,s ” should be removed. (2) On page 529: In Definition 2.4, the statement “for every ε > 0” should be removed. (3) On page 530: In the proof of (C), for all K should be replaced with for all k and l. (4) The references “Li, J. Lacunary statistical convergence and inclusion properties between lacunary m...

متن کامل

Surface enhanced fluorescence and Raman scattering by gold nanoparticle dimers and trimers

Related Articles Single and multi-particle passive microrheology of low-density fluids using sedimented microspheres Appl. Phys. Lett. 102, 074101 (2013) Dose enhancing behavior of hydrothermally grown Eu-doped SnO2 nanoparticles J. Appl. Phys. 113, 064306 (2013) Why specific mixed solvent composition leads to appropriate film formation of composite during spin coating? Appl. Phys. Lett. 102, 0...

متن کامل

Electrical and structural properties of Be- and Si-doped low-temperature-grown GaAs

Excess As is incorporated in GaAs grown at low substrate temperatures by molecular beam epitaxy. Excess As is distributed in the epilayer as defects and the material exhibits considerable strain. When annealed to moderate temperatures, the strain is seen to disappear and the excess As is now in the form of semimetallic clusters. It has been proposed that these As clusters form buried Schottky b...

متن کامل

Catalyst-free growth of high-optical quality GaN nanowires by metal- organic vapor phase epitaxy

Related Articles High temperature thermoelectric properties of optimized InGaN J. Appl. Phys. 110, 123709 (2011) A comparison of the growth modes of (100)and (110)-oriented CrO2 films through the calculation of surface and interface energies J. Appl. Phys. 110, 113910 (2011) A strain relief mode at interface of GaSb/GaAs grown by metalorganic chemical vapor deposition Appl. Phys. Lett. 99, 2219...

متن کامل

Erbium-doped AlN epilayers synthesized by metal-organic chemical vapor deposition

Erbium doped AlN epilayers (AlN:Er) have been grown by metal organic chemical vapor deposition. The 1.54 μm emission properties were probed by photoluminescence (PL) emission spectroscopy and compared with those of GaN:Er. Optimum intensity of the 1.54 μm emission from AlN:Er was obtained for growth temperature at 1050 °C. It was found that the emission intensity from AlN:Er is higher than that...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

ژورنال

عنوان ژورنال: Applied Physics Letters

سال: 1997

ISSN: 0003-6951,1077-3118

DOI: 10.1063/1.120564